List of semiconductor fabrication plants

This is a list of semiconductor fabrication plants. A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are manufactured. They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by pure play foundries who manufacture designs from fabless companies and do not design their own ICs. Some pure play foundries like TSMC offer IC design services, and others, like Samsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.

Glossary of terms

  • Wafer size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.)
  • Process technology node – size of the smallest features that the facility is capable of etching onto the wafers.
  • Production capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month.
  • Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity.
  • Technology/products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market.

Open plants

Operating fabs include:

Company Plant name Plant location Plant cost (in US$ billions) Started production Wafer size (mm) Process technology node (nm) Production capacity (Wafers/Month) Technology / products
UMC – He Jian Fab 8N China,
Suzhou 		0.750, 1.2, +0.5 2003, May 200 4000–1000, 500, 350, 250, 180, 110 77,000 Foundry
UMC Fab 6A Taiwan,
Hsinchu 		0.35 1989 150 450 31,000 Foundry
UMC Fab 8AB Taiwan,
Hsinchu 		1 1995 200 250 67,000 Foundry
UMC Fab 8C Taiwan,
Hsinchu 		1 1998 200 350–110 37,000 Foundry
UMC Fab 8D Taiwan,
Hsinchu 		1.5 2000 200 90 31,000 Foundry
UMC Fab 8E Taiwan,
Hsinchu 		0.96 1998 200 180 37,000 Foundry
UMC Fab 8F Taiwan,
Hsinchu 		1.5 2000 200 150 40,000 Foundry
UMC Fab 8S Taiwan,
Hsinchu 		0.8 2004 200 350–250 31,000 Foundry
UMC Fab 12A Taiwan,
Tainan 		4.65, 4.1, 6.6, 7.3 2001, 2010, 2014, 2017 300 28, 14 87,000 Foundry
UMC Fab 12i Singapore 3.7 2004 300 130–40 53,000 Foundry
UMC – United Semiconductor Fab 12X China,
Xiamen 		6.2 2016 300 55–28 19,000-25,000 (2021) Foundry
UMC – USJC (formerly MIFS) (formerly Fujitsu) Fab 12M (original Fujitsu installations) Japan,
Mie Prefecture 		1974 150, 200, 300 90–40 33,000 Foundry
Texas Instruments Miho Japan,
Ibaraki,
Miho 		200 350, 250 40,000 Analog, DLP
Texas Instruments (formerly Spansion) Aizu Japan,
Fukushima,
Aizuwakamatsu 		200 Analog
Texas Instruments (formerly National Semiconductor) MFAB United States,
Maine,
South Portland 		0.932 1997 200 350, 250, 180 Analog
Texas Instruments (formerly Micron) (formerly IM Flash) LFAB United States,
Utah,
Lehi 		1.3 (+ 3–4, future) 300 65–45 70,000 Analog, mixed signal, logic

NAND FLASH (former), 3D XPoint (former)

Texas Instruments RFAB1 United States,
Texas,
Richardson 		2009 300 250, 180 20,000 Analog
Texas Instruments RFAB2 United States,
Texas,
Richardson 		2022 300 Analog
Texas Instruments DMOS5 United States,
Texas,
Dallas 		1984 200 250, 180 Analog, DLP
Texas Instruments DMOS6 United States,
Texas,
Dallas 		2000 300 130–45 22,000 Logic, Analog
Texas Instruments DFAB United States,
Texas,
Dallas 		1966 150, 200 Mixed Signal, Analog
Texas Instruments SFAB United States,
Texas,
Sherman 		1965 150 Analog
Texas Instruments FFAB Germany,
Bavaria,
Freising 		200 1000, 180 37,500 (450,000 per year) Analog
Texas Instruments (formerly SMIC – Cension) CFAB China,
Chengdu 		200 30,000 Analog
Tsinghua Unigroup China,
Nanjing 		10 (first phase), 30 Planned 300 100,000 (first phase) 3D NAND
Tsinghua Unigroup – XMC (formerly Xinxin) Fab 1 China,
Wuhan 		1.9 2008 300 90, 65, 60, 50, 45, 40, 32 30,000 Foundry, NOR
Tsinghua Unigroup – Yangtze Memory Technologies (YMTC) – XMC (formerly Xinxin) Fab 2 China,
Wuhan 		24 2018 300 20 200,000 3D NAND
ChangXin Memory – (formerly Innotron Memory) Fab 1 China,
Hefei 		8 2019 300 19 20,000–40,000 DRAM
SMIC S1 Mega Fab (S1A/S1B/S1C) China,
Shanghai 		200 350–90 115,000 Foundry
SMIC S2 (Fab 8) China,
Shanghai 		300 45/40–32/28 20,000 Foundry
SMIC – SMSC SN1 China,
Shanghai 		10 2020 300 14 70,000 Foundry
SMIC B1 Mega Fab (Fab 4, Fab 6) China,
Beijing 		2004 300 180–90/55 52,000 Foundry
SMIC B2A China,
Beijing 		3.59 2014 300 45/40–32/28 41,000 Foundry
SMIC Fab 15 China,
Shenzhen 		2014 200 350–90 55,000 Foundry
SMIC Fab 7 China,
Tianjin 		2004 200 350–90 60,000 Foundry
SMIC Jingcheng China,
Beijing 		7.7 Under construction 300 28 100,000 Foundry
SMIC Lingang China,
Shanghai 		8.87 Under construction 300 28 100,000 Foundry
SMIC Shenzhen China,
Shenzhen 		2.35 Under construction 300 28 40,000 Foundry
SMIC Xiqing China,
Tianjin 		7.5 Under construction 300 28 100,000 Foundry
Wuxi Xichanweixin (formerly SMIC – LFoundry) (formerly LFoundry) (formerly Micron) (formerly Texas Instruments) LF Italy,
Abruzzo,
Avezzano 		1995 200 180–90 40,000
Nanya Fab 2 Taiwan,
Linkou 		0.8 2000 200 175 30,000 DRAM
Nanya Fab 3A Taiwan,
New Taipei City 		1.85 2018 300 70-20 34,000 DRAM
Nanya Taiwan,
New Taipei City 		10.66 Under construction 300 10 15,000–45,000 DRAM
MESA+ Institute NANOLAB Netherlands,
Enschede 		Academic research, R&D activities, pilot production for MEMS, Photonics, Microfluidics
Micron Fab 4 United States,
Idaho,
Boise 		300 R&D
Micron (formerly Dominion Semiconductor) Fab 6 United States,
Virginia,
Manassas 		1997 300 25 70,000 DRAM, NAND FLASH, NOR
Micron (formerly TECH Semiconductor) Fab 7 (formerly TECH Semiconductor, Singapore) Singapore 300 60,000 NAND FLASH
Micron (formerly IM Flash) Fab 10 Singapore 3 2011 300 25 140,000 NAND FLASH
Micron (formerly Inotera) Fab 11 Taiwan,
Taoyuan 		300 20 and under 125,000 DRAM
Micron Fab 13 Singapore 200 NOR
Micron Singapore 200 NOR Flash
Micron Micron Semiconductor Asia Singapore
Micron China,
Xi'an
Micron (formerly Elpida Memory) Fab 15 (formerly Elpida Memory, Hiroshima) Japan,
Hiroshima 		300 20 and under 100,000 DRAM
Micron (formerly Rexchip) Fab 16 (formerly Rexchip, Taichung) Taiwan,
Taichung 		300 30 and under 80,000 DRAM, FEOL
Micron (formerly Cando) Micron Memory Taiwan Taiwan,
Taichung 		?, 2018 300 DRAM, BEOL
Micron A3 Taiwan,
Taichung 		Under construction 300 DRAM
Intel D1B United States,
Oregon,
Hillsboro 		1996 300 22, 14, 10 Microprocessors
Intel D1C United States,
Oregon,
Hillsboro 		2001 300 22, 14, 10 Microprocessors
Intel D1D United States,
Oregon,
Hillsboro 		2003 300 14, 10, 7 Microprocessors
Intel D1X United States,
Oregon,
Hillsboro 		2013 300 14, 10, 7 Microprocessors
Intel Fab 12 United States,
Arizona,
Chandler 		1996 300 65, 22, 14 Microprocessors & chipsets
Intel Fab 32 United States,
Arizona,
Chandler 		3 2007 300 45
Intel Fab 32 United States,
Arizona,
Chandler 		2007 300 32, 22 Microprocessors
Intel Fab 42 United States,
Arizona,
Chandler 		10 2020 300 10, 7 Microprocessors
Intel Fab 52, 62 United States,
Arizona,
Chandler 		20 2024 Microprocessors
Intel Fab 11x United States,
New Mexico,
Rio Rancho 		2002 300 45, 32 Microprocessors
Intel (formerly Micron) (formerly Numonyx) (formerly Intel) Fab 18 Israel,
Southern District,
Kiryat Gat 		1996 200, 300 180, 90, 65, 45 Microprocessors and chipsets, NOR flash
Intel Fab 10 Ireland,
County Kildare,
Leixlip 		1994 300
Intel Fab 14 Ireland,
County Kildare,
Leixlip 		1998 300
Intel Fab 24 Ireland,
County Kildare,
Leixlip 		2004 300 90, 65, 14 Microprocessors, Chipsets and Comms
Intel Fab 28 Israel,
Southern District,
Kiryat Gat 		2008 300 45, 22, 10 Microprocessors
Intel Fab 38 Israel,
Southern District,
Kiryat Gat 		Under construction 300 Microprocessors
Intel Fab 68 China,
Dalian 		2.5 2010 300 65 30,000–52,000 Microprocessors (former), VNAND
Intel Costa Rica,
Heredia,
Belén 		1997 300 22, 14 Packaging
Tower Semiconductor (formerly Maxim) (formerly Philips) (formerly VLSI) Fab 9 United States,
Texas,
San Antonio 		2003 200 180 28,000 Foundry, Al BEOL, Power, RF Analog
Tower Semiconductor (formerly National Semiconductor) Fab 1 Israel,
Northern District,
Migdal HaEmek 		0.235 1989, 1986 150 1000–350 14,000 Foundry, Planarized BEOL, W and Oxide CMP, CMOS, CIS, Power, Power Discrete
Tower Semiconductor Fab 2 Israel,
Northern District,
Migdal HaEmek 		1.226 2003 200 180–130 51,000 Foundry, Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS
Tower Semiconductor (formerly Jazz Technologies) (formerly Conexant) (formerly Rockwell) Fab 3, Newport Beach United States,
California,
Newport Beach 		0.165 1967, 1995 200 500-130 25,000 Foundry, Al BEOL, SiGe, EPI
Tower Semiconductor – TPSCo (formerly Panasonic) Fab 5, Tonami Japan,
Tonami 		1994 200 500–130 Foundry, Analog/Mixed-Signal, Power, Discrete, NVM, CCD
Tower Semiconductor – TPSCo (formerly Panasonic) Fab 7, Uozu Japan,
Uozu 		1984 300 65. 45 Foundry, CMOS, CIS, RF SOI, Analog/Mixed-Signal
Tower Semiconductor – TPSCo (formerly Panasonic) Fab 6, Arai Japan,
Arai 		1976 200 130–110 Foundry, Analog/Mixed-Signal, CIS, NVM,Thick Cu RDL
Nuvoton Fab2 Taiwan 150 1000-350 45,000 Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Management, Mask ROM (Flat Cell), Embedded Logic, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor
ISRO SCL India,
Mohali 		2006 200 180 MEMS, CMOS, CCD, N.S.
STAR-C MEMS India,
Bangalore 		1996 150 1000–500 MEMS
STAR-C CMOS India,
Bangalore 		1996 150 1000–500 CMOS
GAETEC GaAs India,
Hyderabad 		1996 150 700–500 MESFET
BAE Systems (formerly Sanders) United States,
New Hampshire,
Nashua 		1985 100, 150 140, 100, 70, 50 MMIC, GaAs, GaN-on-SiC, foundry
Qorvo (formerly RF Micro Devices) United States,
North Carolina,
Greensboro 		100,150 500 8,000 SAW filters, GaAs HBT, GaAs pHEMT, GaN
Qorvo (formerly TriQuint Semiconductor) (formerly Micron) (formerly Texas Instruments) (formerly TwinStar Semiconductor) United States,
Texas,
Richardson 		0.5 1996 100, 150, 200 350, 250, 150, 90 8,000 DRAM (former), BAW filters, power amps, GaAs pHEMT, GaN-on-SiC
Qorvo (formerly TriQuint Semiconductor) United States,
Oregon,
Hillsboro 		100, 150 500 Power amps, GaAs
Apple (formerly Maxim) (formerly Samsung) X3 United States,
California,
San Jose 		?, 1997, 2015 600–90
Analog Devices (formerly Maxim Integrated) MaxFabNorth United States,
Oregon,
Beaverton 		(+1, future)
Rohm (formerly Renesas) Shiga Factory Japan 200 150 IGBT, MOSFET, MEMS
Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry) Miyasaki Japan 150 MEMS
Rohm (Lapis Semiconductor) Building No.1 Japan 1961 Transistors
Rohm (Lapis Semiconductor) Building No.2 Japan 1962 Transistors
Rohm (Lapis Semiconductor) Building No.3 Japan 1962 Transistors
Rohm (Lapis Semiconductor) Building No.4 Japan 1969 Transistors
Rohm (Lapis Semiconductor) Chichibu Plant Japan 1975 DRAM
Rohm (Lapis Semiconductor) VLSI Laboratory No. 1 Japan 1977 VLSI
Rohm (Lapis Semiconductor) VLSI Laboratory No. 2 Japan 1983
Rohm (Lapis Semiconductor) VLSI Laboratory No. 3 Japan 1983 DRAM
Rohm (Lapis Semiconductor) Oregon Plant United States,
Oregon 		1990
Rohm (Lapis Semiconductor) Thailand 1992
Rohm (Lapis Semiconductor) ULSI Laboratory No. 1 Japan 1992 500 DRAM
Rohm (Kionix) Ithaca United States,
New York,
Ithaca 		150 MEMS
Rohm (Kionix) (formerly Renesas Kyoto) Kyoto Japan,
Kyoto 		200 MEMS
Oki Electric Industry Japan,
Tokyo,
Minato-ku 		1961 76, 100, 130, 150 7,200 Bipolar, Mask ROM
Oki Electric Industry Miyazaki Oki Electric Co Japan,
Miyazaki prefecture,
Miyazaki-gun 		1981 76, 100, 130, 150 3000, 1500–500 7,200 Bipolar, Mask ROM, DRAM
Oki Electric Industry Miyagi Facility Japan,
Miyagi prefecture,
Kurokawa-gun 		1988 76, 100, 130, 150, 200 800–130 7,200 Bipolar, Mask ROM, SoCs, Memory
Oki Electric Industry Hachioji Facility Japan,
Tokyo,
Hachioji-shi 		76, 100, 130, 150 7,200 Bipolar, Mask ROM
Fuji Electric Omachi Japan,
Nagano Prefecture
Fuji Electric Iyama Japan,
Nagano Prefecture
Fuji Electric Hokuriku Japan,
Toyama prefecture
Fuji Electric Matsumoto Japan,
Nagano prefecture 		100, 150 2000–1000 20,000 CMOS. BiCMOS, bipolar, ASICs, discrete
Fujitsu Kawasaki Japan,
Kawasaki 		1966
Fujitsu Fab B1 (at Mie) Japan, 1500 Tadocho Mizono, Kuwana, Mie 2005 300 65, 90 15,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs
Fujitsu Fab B2 (at Mie) Japan, 1500 Tadocho Mizono, Kuwana, Mie 1 (total) 2007, July 300 65, 90 25,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs
Fujitsu Japan, 1500 Tadocho Mizono, Kuwana, Mie 2015 300 40 5,000 Foundry
Fujitsu Kumagaya Plant Japan,
Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801 		1974
Fujitsu Suzaka Plant Japan,
Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501
Denso (formerly Fujitsu) Iwate Plant Japan,
Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593 		125, 150, 200 1500–350 100,000 CMOS, MOS, bipolar
Denso Denso Iwate Japan,
Iwate Prefecture, Kanegasaki-cho 		0.088 Under construction, 2019, May (planned) Semiconductor wafers and sensors (since June 2017)
Canon Inc. Oita Japan
Canon Inc. Kanagawa Japan
Canon Inc. Ayase Japan
Sharp Corporation Fukuyama Japan 125, 150, 200 1000, 800, 600 85,000 CMOS
Japan Semiconductor

Iwate Japan
Japan Semiconductor Oita Japan
Kioxia Yokkaichi Operations Japan,
Yokkaichi 		1992 173,334 Flash Memory
Kioxia/SanDisk Y5 Phase 1 (at Yokkaichi Operations) Japan, 800 Yamanoisshikicho, Yokkaichi, Mie 2011 Flash
Kioxia/SanDisk Y5 Phase 2 (at Yokkaichi Operations) Japan,
Mie 		2011 300 15 Flash
Kioxia Y3 (at Yokkaichi Operations) Japan,
Yokkaichi 		300 NAND Memory
Kioxia Y4 (at Yokkaichi Operations) Japan,
Yokkaichi 		2007 300 NAND Memory
Kioxia Kaga Toshiba Japan,
Ishikawa 		Power semiconductor devices
Kioxia Oita Operations Japan,
Kyushu
Kioxia Y6 (phase 1) (at Yokkaichi Operations) Japan,
Yokkaichi 		1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2) 2018 300 BiCS FLASH™
Kioxia Y6 (phase 2) (at Yokkaichi Operations) Japan,
Yokkaichi 		1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2) Planned 300 BiCS FLASH™
Kioxia Y7 Japan,
Yokkaichi 		4.6 Planned 300 BiCS FLASH™
Kioxia Y2 (at Yokkaichi Operations) Japan,
Yokkaichi 		1995 3D NAND
Kioxia New Y2 (at Yokkaichi Operations) Japan,
Yokkaichi 		2016, July 15 300 3D NAND
Kioxia K1 Japan,
Iwate Prefecture 		Under construction 300 3D NAND
Western Digital
Hitachi Rinkai Factory Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319–1221 MEMS Foundry
Hitachi Haramachi Factory Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041 Power semiconductors
Hitachi Yamanashi Factory Japan, 545, Itchohata, Chuo-shi, Yamanashi, 409-3813 Power semiconductors
ABB Lenzburg Switzerland,
Aargau,
Lenzburg 		0.140 2010 (second phase) 130, 150 18,750 (225,000 per year) High power semiconductors, diodes, IGBT, BiMOS
ABB (formerly Polovodiče a.s.) Czech Republic, Prague High power semiconductors, diodes
Mitsubishi Electric Power Device Works, Kunamoto Site Japan 100, 125, 150, 200 2000–400 122,000 Power semiconductors
Mitsubishi Electric Power Device Works, Fukuoka Site Japan,
Kunamoto Prefecture,
Fukuoka City 		100, 150 3000–2000 50,000 Power semiconductors and sensors
Mitsubishi Electric High frequency optical device manufacturing plant Japan,
Hyogo Prefecture 		100, 125 30,000 High frequency semiconductor devices (GaAsFET, GaN, MMIC)
Powerchip Semiconductor Memory Foundry, Fab P1 Taiwan,
Hsinchu 		2.24 2002 300 90, 70, 22 80,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor Fab P2 Taiwan,
Hsinchu,
Hsinchu Science Park 		1.86 2005 300 90, 70, 22 80,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor (formerly Macronix) Fab P3 Taiwan,
Hsinchu,
Hsinchu Science Park 		300 90, 70, 22 20,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
SPIL (formerly ProMOS) ProMOS Fab 4 Taiwan,
Taichung 		1.6 300 70
Macronix (formerly ProMOS) Fab 5 Taiwan, Hsinchu 300 50,000
Macronix Fab 2 Taiwan 200 48,000
Hon Young Semiconductor (formerly Macronix) Fab 1 150 800-400 40,000 Foundry, SiC, Automotive MOSFETs, MEMS
Renesas Naka Factory Japan 2009 300 28
Renesas (formerly Trecenti) Japan 300 180, 90, 65 Foundry
Renesas Takasaki Factory Japan, 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021
Renesas Shiga Factory Japan, 2-9-1, Seiran, Otsu-shi, Shiga, 520-8555
Renesas Yamaguchi Factory Japan, 20192–3, Higashimagura Jinga, Ube-shi, Yamaguchi, 757-0298
Renesas Kawashiri Factory Japan, 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861–4195
Renesas Saijo Factory Japan, 8–6, Hiuchi, Saijo-shi, Ehime, 793-8501
Renesas Musashi Site Japan, 5-20-1, Josuihon-cho, Kodaira-shi, Tokyo, 187-8588
Renesas – Intersil Palm Bay United States, Florida, Palm Bay
Integrated Device Technology United States,
Oregon,
Hillsboro 		1997 200 140–100
NEC 100, 130, 150 SRAM, DRAM
NEC Japan DRAM
TSI Semiconductors (formerly Renesas) Roseville fab, M-Line, TD-Line, K-Line United States,
California,
Roseville 		1992, 1985 200
TDK – Micronas FREIBURG Germany,
19 D-79108, Hans-Bunte-Strasse
TDK (formerly Renesas) Tsuruoka Higashi 125
TDK Japan,
Saku
TDK – Tronics United States,
Texas,
Addison
Silanna (formerly Sapphicon Semiconductor) Australia,
New South Wales,
Sydney 		0.030 1965,1989 150
Silanna (formerly Sapphicon Semiconductor) (formerly Peregrine Semiconductor) (formerly Integrated Device Technology) Australia,
New South Wales,
Sydney

150 500, 250 RF CMOS, SOS, foundry
Murata Manufacturing Nagano Japan 0.100 SAW filters
Murata Manufacturing Otsuki Japan
Murata Manufacturing Kanazawa Japan 0.111 SAW filters
Murata Manufacturing (formerly Fujifilm) Sendai Japan,
Miyagi Prefecture 		0.092 MEMS
Murata Manufacturing Yamanashi Japan,
Yamanashi Prefecture
Murata Manufacturing Yasu Japan,
Shiga Prefecture,
Yasu
Murata Electronics (Finland) (formerly VTI, since 1979 Vaisalas int. semicon. line) Vantaa Finland 2012, expanded 2019 3D MEMS accelerometers, inclinometers, pressure sensors, gyros, oscillators etc.
Mitsumi Electric Semiconductor Works #3 Japan,
Atsugi Operation Base 		2000
Mitsumi Electric Japan,
Atsugi Operation Base 		1979
Sony Kagoshima Technology Center Japan,
Kagoshima 		1973 100, 125, 150 2000–500 110,000 Bipolar CCD, MOS, MMIC, SXRD
Sony Oita Technology Center Japan,
Oita 		2016 CMOS Image Sensor
Sony Nagasaki Technology Center Japan,
Nagasaki 		1987 150 1000-350 80,000 MOS LSI, CMOS Image Sensors, SXRD
Sony Kumamoto Technology Center Japan,
Kumamoto 		2001 CCD Image Sensors, H-LCD, SXRD
Sony Shiroishi Zao Technology Center Japan,
Shiroishi 		1969 Semiconductor Lasers
Sony Sony Shiroishi Semiconductor Inc. Japan,
Miyagi 		Semiconductor Lasers
Sony (formerly Renesas) (formerly NEC Electronics) (formerly NEC) Yamagata Technology Center Japan,
Yamagata 		2014 (Sony) 100, 125, 150, 200 3000, 2000, 800 MOS, bipolar, CMOS Image Sensor, eDRAM (formerly)
SK Hynix China,
Chongqing
SK Hynix China,
Chongqing
SK Hynix South Korea,
Cheongju,
Chungcheongbuk-do 		Under construction NAND Flash
SK Hynix South Korea,
Cheongju 		Under construction NAND Flash
SK Hynix HC1 China,
Wuxi 		300 100,000 DRAM
SK Hynix HC2 China,
Wuxi 		300 70,000 DRAM
SK Hynix M16 South Korea,
Icheon 		3.13 (13.4 total planned) 2021 (planned) 300 10 (EUV) 15,000–20,000 (initial) DRAM
LG Innotek Paju South Korea,
570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842 		LED Epi-wafer, Chip, Package
ON Semiconductor (formerly GlobalFoundries) (formerly IBM) United States,
New York,
East Fishkill 		2.5, +.29 (future) 2002 300 90–22, 14 12,000–15,000 Foundry, RF SOI, SOI FinFET (former), SiGe, SiPh
ON Semiconductor (formerly LSI) Gresham United States,
Oregon,
Gresham 		200 110
ON Semiconductor (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) United States,
Pennsylvania,
Mountain Top 		1960–1997 200 350
ON Semiconductor (formerly TESLA) Roznov Czech Republic,
Zlín,
Rožnov pod Radhoštěm 		150 5000 SiC
ON Semiconductor (formerly Motorola) ISMF Malaysia,
Seremban 		150 350 80,000 Discrete
ON Semiconductor (formerly Fujitsu) Aizu Wakamatsu Plant Japan,
Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502 		1970 150, 200 2000-130 Memory, Logic
JS Foundry K.K. (formerly ON Semiconductor) (formerly Sanyo) Niigata Japan,
Niigata 		125, 150 2000–600, 350 120,000 CMOS, bipolar, BiCMOS
BelGaN Group (formerly ON Semiconductor) (formerly AMI Semiconductor) (formerly Alcatel Microelectronics) (formerly Mietec) Oudenaarde Belgium,
East Flanders,
Oudenaarde 		150, 200 3000, 2000–350 GaN, mixed-signal CMOS, BCD foundry
LA Semiconductor (formerly ON Semiconductor) (formerly AMI Semiconductor) Pocatello United States,
Idaho,
Pocatello 		1997 200 350
Diodes Incorporated (formerly ON Semiconductor) (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) SPFAB United States,
Maine,
South Portland 		1960–1997 200 350
Diodes Incorporated (formerly Zetex Semiconductors) OFAB UK,
England,
Greater Manchester,
Oldham 		150
Diodes Incorporated (formerly BCD Semi) China 150 4000–1000
Lite-On Optoelectronics China,
Tianjin
Lite-On Optoelectronics Thailand,
Bangkok
Lite-On Optoelectronics China,
Jiangsu
Lite-On Semiconductor Keelung Plant Taiwan,
Keelung 		1990 100 Thyristor, DIscrete
Lite-On Semiconductor Hsinchu Plant Taiwan,
Hsinchu 		2005 Bipolar BCD, CMOS
Lite-On Semiconductor Lite-On Semi (Wuxi) China,
Jiangsu 		2004 100 Discrete
Lite-On Semiconductor Wuxi WMEC Plant China,
Jiangsu 		2005 Discrete, Power, Optical ICs
Lite-On Semiconductor Shanghai (SSEC) Plant China,
Shanghai 		1993 76 Fab, Assembly
Trumpf (formerly Philips Photonics) Germany,
Baden-Württemberg,
Ulm 		VCSEL
Philips Netherlands,
North Brabant,
Eindhoven 		150, 200 30,000 R&D, MEMS
Newport Wafer Fab (formerly Infineon Technologies) FAB11 UK,
Wales,
Newport 		200 700-180 32,000 Foundry, Compound Semiconductors, IC, MOSFET, IGBT
Nexperia (formerly NXP Semiconductors) (formerly Philips) Hamburg site Germany,
Hamburg 		1953 200 35,000 Small-signal and bipolar discrete devices
Nexperia (formerly NXP Semiconductors) (formerly Philips) (formerly Mullard) Manchester UK,
England,
Greater Manchester,
Stockport 		1987? 150, 200 24,000 GaN FETs, TrenchMOS MOSFETs
NXP Semiconductors (formerly Philips) ICN8 Netherlands,
Gelderland,
Nijmegen 		200 40,000+ SiGe
NXP Semiconductors Japan Bipolar, Mos, Analog, Digital, Transistors, Diodes
NXP Semiconductors - SSMC SSMC Singapore 1.7 2001 200 120 53,000 SiGe
NXP Semiconductors – Jilin Semiconductor China,
Jilin 		130
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) Oak Hill Fab United States,
Texas,
Austin 		0.8 1991 200 250
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) Chandler Fab United States,
Arizona,
Chandler 		1.1 +0.1 (GaN) 1993 150 (GaN), 200 180 GaN-on-SiC pHEMT
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) ATMC United States,
Texas,
Austin 		1995 200 90
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) MOTOFAB1 Mexico,
Jalisco,
Guadalajara 		2002
AWSC Taiwan,
Tainan 		1999 150 12,000 Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP
Skyworks Solutions (formerly Conexant) (formerly Rockwell) United States,
California,
Newbury Park 		100, 150 Compound Semiconductors (GaAs, AlGaAs, InGaP)
Skyworks Solutions (formerly Alpha Industries) United States,
Massachusetts,
Woburn 		100, 150 RF/cellular components (SiGe, GaAs)
Skyworks Solutions Japan,
Osaka 		SAW, TC-SAW Filters
Skyworks Solutions Japan,
Kadoma 		SAW, TC-SAW Filters
Skyworks Solutions Singapore,
Bedok South Road 		SAW, TC-SAW Filters
Win Semiconductor Fab A Taiwan,
Taoyuan City 		150 2000–10 Foundry, GaAs
Win Semiconductor Fab B Taiwan,
Taoyuan City 		150 2000–10 Foundry, GaAs, GaN
Win Semiconductor Fab C Taiwan,
Taoyuan 		0.050, 0.178 2000, 2009 150 Foundry, GaAs
ams FAB B Austria,
Styria,
Unterpremstätten 		200 350
Osram (Osram Opto Semiconductors) Malaysia,
Kulim,
Kulim Hi-Tech Park 		0.350, 1.18 2017, 2020 (second phase, planned) 150 LEDs
Osram (Osram Opto Semiconductors) Malaysia,
Penang 		2009 100 LEDs
Osram (Osram Opto Semiconductors) Germany,
Bavaria,
Regensburg 		2003, 2005 (second phase) LEDs
Winbond Memory Product Foundry Taiwan,
Taichung 		300 46
Winbond CTSP Site Taiwan,
No. 8, Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881 		300
Winbond Planned 300
Vanguard International Semiconductor Fab 1 Taiwan,
Hsinchu 		0.997 1994 200 500, 350, 250 55,000 Foundry, CMOS
Vanguard International Semiconductor (formerly Winbond) Fab 2 (formerly Fab 4&5) Taiwan,
Hsinchu 		0.965 1998 200 55,000 Foundry
Vanguard International Semiconductor Corporation (formerly GlobalFoundries) (formerly Chartered) Fab 3E Singapore 1.3 200 180 34,000 Foundry
TSMC Fab 2 Taiwan,
Hsinchu 		0.735 1990 150 800, 600, 500 88,000 Foundry, CMOS
TSMC Fab 3 Taiwan,
Hsinchu 		2 1995 200 500, 350, 250 100,000 Foundry, CMOS
TSMC Fab 5 Taiwan,
Hsinchu 		1.4 1997 200 350, 250, 180 48,000 Foundry, CMOS
TSMC Fab 6 Taiwan,
Tainan 		2.1 2000, January; 2001 200, 300 180–? 99,000 Foundry
TSMC (formerly TASMC) (formerly Acer Semiconductor Manufacturing Inc.) (formerly Texas Instruments) Fab 7 Taiwan 200 350, 250, 220, 180 33,000 Foundry (current)

DRAM (former), Logic (former)

TSMC (formerly WSMC) Fab 8 Taiwan,
Hsinchu 		1.6 1998 200 250, 180 85,000 Foundry
TSMC (formerly WSMC) 2000 200 250, 150 30,000 Foundry
TSMC China Company Fab 10 China,
Shanghai 		1.3 2004 200 74,000 Foundry
TSMC Fab 12 Taiwan,
Hsinchu 		5.2, 21.6 (total, all phases combined) 2001 300 150–28 77,500–123,800 (all phases combined) Foundry
TSMC Fab 12 (P4) Taiwan,
Hsinchu 		6 2009 300 20 40,000 Foundry
TSMC Fab 12 (P5) Taiwan,
Hsinchu 		3.6 2011 300 20 6,800 Foundry
TSMC Fab 12 (P6) Taiwan,
Hsinchu 		4.2 2013 300 16 25,000 Foundry
TSMC Fab 14 Taiwan,
Tainan 		5.1 2002, 2004 300 20 82,500 Foundry
TSMC Fab 14 (B) Taiwan,
Tainan 		300 16 50,000+ Foundry
TSMC Fab 14 (P3) Taiwan,
Tainan 		3.1 2008 300 16 55,000 Foundry
TSMC Fab 14 (P4) Taiwan,
Tainan 		3.750 2011 300 16 45,500 Foundry
TSMC Fab 14 (P5) Taiwan,
Tainan 		3.650 2013 300 16 Foundry
TSMC Fab 14 (P6) Taiwan,
Tainan 		4.2 2014 300 16 Foundry
TSMC Fab 14 (P7) Taiwan,
Tainan 		4.850 2015 300 16 Foundry
TSMC Fab 15 Taiwan,
Taichung 		9.3 2011 300 20 100,000+(166,000 estimate) Foundry
TSMC Fab 15 (P1) Taiwan,
Taichung 		3.125 2011 300 4,000 Foundry
TSMC Fab 15 (P2) Taiwan,
Taichung 		3.150 2012 300 Foundry
TSMC Fab 15 (P3) Taiwan,
Taichung 		3.750 2013 300 Foundry
TSMC Fab 15 (P4) Taiwan,
Taichung 		3.800 2014 300 Foundry
TSMC Fab 15 (P5) Taiwan,
Taichung 		9.020 2016 300 35,000 Foundry
TSMC Fab 18 (P1-P3) Taiwan,
Southern Taiwan Science Park 		17.08 2020 (P7 under construction) 300 5 120,000 Foundry
TSMC Fab 18 (P4-P6) Taiwan,
Southern Taiwan Science Park 		2022 (planned), under construction 300 3 120,000 Foundry
TSMC Fab 21 United States,
Arizona,
Phoenix 		12 Q1 2024 (planned), P1 under construction 300 5 & 4 20,000 Foundry
Epistar Fab F1 Taiwan,
Longtan Science Park 		LEDs
Epistar Fab A1 Taiwan,
Hsinchu Science Park 		LEDs
Epistar Fab N2 Taiwan,
Hsinchu Science Park 		LEDs
Epistar Fab N8 Taiwan,
Hsinchu Science Park 		LEDs
Epistar Fab N1 Taiwan,
Hsinchu Science Park 		LEDs
Epistar Fab N3 Taiwan,
Hsinchu Science Park 		LEDs
Epistar Fab N6 Taiwan,
Chunan Science Park 		LEDs
Epistar Fab N9 Taiwan,
Chunan Science Park 		LEDs
Epistar Fab H1 Taiwan,
Central Taiwan Science Park 		LEDs
Epistar Fab S1 Taiwan,
Tainan Science Park 		LEDs
Epistar Fab S3 Taiwan,
Tainan Science Park 		LEDs
Epistar (formerly TSMC) Taiwan,
Hsin-Chu Science Park 		0.080 2011, second half LEDs
Lextar T01 Taiwan,
Hsinchu Science Park 		LEDs
GCS United States,
California,
Torrance 		1999 100 6,400 Foundry, GaAs, InGaAs, InGaP, InP, HBT, PICs
Bosch Germany,
Baden-Württemberg,
Reutlingen 		1995 150 ASIC, analog, power, SiC
Bosch Germany,
Saxony,
Dresden 		1.0 2021 300 65
Bosch WaferFab Germany,
Baden-Württemberg,
Reutlingen 		0.708 2010 200 30,000 ASIC, analog, power, MEMS
STMicroelectronics AMK8 (second, newer fab) Singapore,
Ang Mo Kio 		1995 200
STMicroelectronics (formerly SGS Microelettronica) AMJ9 (first fab) Singapore,
Ang Mo Kio 		1984 150, 200 6" 14 kpcs/day, 8" 1.4 kpcs/day Power-MOS/ IGBT/ bipolar/ CMOS
X-Fab Erfurt Germany,
Thuringia,
Erfurt 		1985 200 1000-600 11200– Foundry
X-Fab (formerly ZMD) Dresden Germany,
Saxony,
Dresden 		0.095 1985 200 1000-350 6000– Foundry, CMOS, GaN-on-Si
X-Fab (formerly Itzehoe) Itzehoe Germany,
Schleswig-Holstein,
Itzehoe 		200 13000– Foundry, MEMS
X-Fab (formerly 1st Silicon) Kuching Malaysia,
Kuching 		1.89 2000 200 350-130 30,000– Foundry
X-Fab (formerly Texas Instruments) Lubbock United States,
Texas,
Lubbock 		0.197 1977 150, 200 1000-600 15000– Foundry, SiC
X-Fab France SAS (formerly Altis Semiconductor) (formerly IBM) ACL-AMF France,
Île-de-France,
Corbeil-Essonnes 		1991, 1964 200 350-130 Foundry, CMOS, RF SOI
IXYS Germany,
Hesse,
Lampertheim 		IGBT
IXYS UK,
England,
Wiltshire,
Chippenham
IXYS United States,
Massachusetts
IXYS United States,
California
Samsung V1-Line South Korea,
Hwaseong 		6 2020, February 20 300 7 Microprocessors, Foundry
Samsung S3-Line South Korea,
Hwaseong 		10.2, 16.2 (planned) 2017 300 10 200,000 DRAM, VNAND, Foundry
Samsung S2-Line United States,
Texas,
Austin 		16 2011 300 65–11 92,000 Microprocessors, FDSOI, Foundry, NAND
Samsung S1-Line South Korea,
Giheung 		33 (total) 2005 (second phase), 1983 (first phase) 300 65–7 62,000 Microprocessors, S.LSI, LEDs, FDSOI, Foundry
Samsung Pyeongtaek South Korea,
Pyeongtaek 		14.7, 27 (total) 2017, July 6 300 14 450,000 V-NAND, DRAM, Foundry
Samsung 6 Line South Korea,
Giheung 		100, 150, 200 1500–500, 180–65 Foundry, CMOS, BiCMOS
Samsung Samsung China Semiconductor China,
Shaanxi Province 		DDR Memory
Samsung Samsung Suzhou Research Center (SSCR) China,
Suzhou,
Suzhou Industrial Park 		DDR Memory
Samsung Onyang Complex South Korea,
Chungcheongnam-do 		display.backend process.test
Samsung F1x1 China,
Xian 		2.3 2014 (first phase, second phase is under review) 300 20 100,000 VNAND
Samsung Giheung Campus South Korea,
Gyeonggi-do,
Yongin 		LEDs
Samsung Hwasung Campus South Korea,
Gyeonggi-do,
Hwaseong 		LEDs
Samsung Tianjin Samsung LED Co., Ltd. China,
Tianjin,
Xiqing 		LEDs
Seagate United States,
Minnesota,
Minneapolis
Seagate UK,
Northern Ireland
Broadcom Inc. (formerly Avago) United States,
Colorado,
Fort Collins
Wolfspeed (formerly Cree Inc.) Durham United States,
North Carolina,
Durham 		Compound Semiconductors, LEDs
Wolfspeed (formerly Cree Inc.) Research Triangle Park United States,
North Carolina 		GaN HEMT RF ICs
SMART Modular Technologies Brazil,
São Paulo,
Atibaia 		2006 Packaging
Infineon Technologies Villach Austria,
Carinthia,
Villach 		1970 100, 150, 200, 300 MEMS, SiC, GaN
Infineon Technologies Dresden Germany,
Saxony,
Dresden 		3 1994–2011 200, 300 90
Infineon Technologies Kulim Malaysia,
Kulim 		2006 200, 300 50,000
Infineon Technologies Kulim 2 Malaysia,
Kulim 		2015 200, 300 50,000
Infineon Technologies Regensburg Germany,
Bavaria,
Regensburg 		1959
Infineon Technologies Cegled Hungary,
Pest,
Cegléd
Infineon Technologies El Segundo United States,
California,
El Segundo
D-Wave Systems Superconducting Foundry Quantum Processing Units (QPUs)
GlobalFoundries (formerly AMD) Fab 1 Module 1 Germany,
Saxony,
Dresden 		3.6 2005 300 45-22 35,000 Foundry, SOI, FDSOI
GlobalFoundries (formerly AMD) Fab 1 Module 2 Germany,
Saxony,
Dresden 		4.9 1999 300 45-22 25,000 Foundry, SOI
GlobalFoundries Fab 1 Module 3 Germany,
Saxony,
Dresden 		2.3 2011 300 45-22 6,000 Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 2 Singapore 1.3 1995 200 600-350 56,000 Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 3/5 Singapore 0.915, 1.2 1997, 1995 200 350-180 54,000 Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 6 (merged into Fab 7) Singapore 1.4 2000 200, 300 (merged) 180-110 45,000 Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 7 Singapore 4.6 2005 300 130, 110, 90, 65, 40 50,000 Foundry, Bulk CMOS, RF SOI
GlobalFoundries Fab 8 United States,
New York,
Malta 		4.6, 2.1, (1, future) 13+ (total) 2012, 2014 300 28, 22, 14, 12 60,000 (+12,500 future) Foundry, High-K Metal Gate, SOI FinFET
GlobalFoundries (formerly IBM) Fab 9 United States, Vermont, Essex Junction 1957 200 350-90 50,000 Foundry, SiGe, RF SOI, GaN
GlobalFoundries Technology Development Center United States,
New York,
Malta 		1.5 2014
SUNY Poly CNSE NanoFab 300 North United States,
New York,
Albany 		0.175, 0.050 2004, 2005 300 65, 45, 32, 22
SUNY Poly CNSE NanoFab 200 United States,
New York,
Albany 		0.016 1997 200
SUNY Poly CNSE NanoFab Central United States,
New York,
Albany 		0.150 2009 300 22
Skorpios Technologies (formerly Novati) (formerly ATDF) (formerly SEMATECH) United States,
Texas,
Austin 		0.065 1989 200 10,000 MEMS, photonics, foundry
Opto Diode United States,
California,
Camarillo
Optek Technology 1968 100, 150 GaAs, LEDs
II-VI (formerly Oclaro) (formerly Bookham) (formerly NORTHERN TELECOM SEMICONDUCTOR

NORTHERN TELECOM EUROPE) (formerly JDS Uniphase) (formerly Uniphase)

Semiconductor Lasers, Photodiodes
Infinera United States,
California,
Sunnyvale
Rogue Valley Microdevices United States,
Oregon,
Medford 		2003 50.8–300 MEMS Foundry, Thin Films Foundry, Silicon Wafers, Wafer Services, MEMS R&D
Atomica Fab 1 United States,
California,
Goleta 		2000 150, 200 350 20,000 Foundry: MEMS, Photonics, Sensors, Biochips
Sensera uDev-1 United States,
Massachusetts,
Woburn 		2014 150 700 1,000 MEMS, MicroDevice assembly
Rigetti Computing Fab-1 United States,
California,
Fremont 		130 Quantum Processors
NHanced Semiconductors MNC United States,
North Carolina,
Morrisville 		2001 100, 150, 200 >=500 1000 MEMS, Silicon Sensors, BEoL, 2.5/3D and advanced packaging
Polar Semiconductor FAB 1,2,3 United States,
Minnesota,
Bloomington 		200 BCD, HV, GMR
Orbit Semiconductor 100 CCD, CMOS
Entrepix United States,
Arizona,
Tempe 		2003
Medtronic United States,
Arizona,
Tempe 		1973
Technologies and Devices International United States,
Florida,
Silver Springs 		2002
Soraa Inc United States,
California
Soraa Laser Diode
Mirrorcle Technologies United States,
California,
Richmond
HTE LABS HTE LABS United States,
California,
San Jose 		0.005 2009 100, 150 4000–1000 1,000 Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com
HT Micron Brazil,
Rio Grande do Sul,
São Leopoldo 		2014 DRAM, eMCP, iMCP
Unitec do Brasil Brazil,
Minas Gerais,
Ribeirão das Neves 		Planned
Unitec Blue Argentina,
Buenos Aires Province,
Chascomús 		0.3 (1.2 planned) 2013 RFID, SIM, EMV
Everlight Yuan-Li Plant Taiwan,
Miao-Li 		LEDs
Everlight Pan-Yu Plant China LEDs
Everlight Tu-Cheng Plant Taiwan,
Taipei Country 		LEDs
Optotech Taiwan,
Hsinchu 		LEDs
Arima Optoelectronics Taiwan,
Hsinchu 		1999
Episil Semiconductor Taiwan,
Hsinchu 		1992, 1990, 1988
Episil Semiconductor Taiwan,
Hsinchu 		1992, 1990, 1988
Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine NanChang Creative Sensor China,
Jiangxi 		2007 Image Sensors
Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine Archived 2017-07-07 at the Wayback Machine Wuxi Creative Sensor China,
JiangSu 		2002
Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine Archived 2017-07-07 at the Wayback Machine Wuxi Creative Sensor Taiwan,
Taipei City 		1998
Visera Technologies Headquarters Phase I Taiwan,
Hsinchu Science-based Industrial Park 		2007, September CMOS Image Sensors
Panjit Taiwan,
Kaohsiung 		0.1 2003
Nanosystem Fabrication Facility Hong Kong
GTA Semiconductor (formerly ASMC) Fab 2, Fab 3 China,
Shanghai,
Xuhui District 		200 350, 180, 150 55333 HV Analog, Power
GTA Semiconductor Fab 5, Fab 6 China,
Shanghai,
Pudong New Area 		5.1 2020 150, 200, 300 115000
Shanghai Belling China,
Shanghai 		150 1200 BiCMOS, CMOS
SiSemi China,
Shenzhen,
Longgang High-tech Industrial Park 		2004 130 Power semiconductors, LED drivers, bipolar power transistors, power MOSFETs
SiSemi 1997 100 Transistors
CRMicro (formerly CSMC) Fab 1 1998 150 60,000 HV Analog, MEMS, Power, Analog, Foundry
CRMicro (formerly CSMC) Fab 2 China,
Wuxi 		2008 200 180, 130 40,000 HV Analog, Foundry
CRMicro (formerly CSMC) Fab 3 1995 200 130 20,000
CRMicro (formerly CSMC) Fab 5 2005 30,000
Nexchip N1 China,
Hefei 		Q4 2017 300 40,000 Display Drivers IC
Nexchip N2 China,
Hefei 		Under construction 300 40,000
Nexchip N3 China,
Hefei 		Under construction 300 40,000
Nexchip N4 China,
Hefei 		Under construction 300 40,000
Wandai CQ China,
Chongqing 		Under construction 300 20,000
San'an Optoelectronics Tianjin San'an Optoelectronics Co., Ltd. China,
Tianjin 		LEDs
San'an Optoelectronics Xiamen San'an Optoelectronics Technology Co., Ltd. China,
Xiamen 		LEDs
San'an Optoelectronics Xiamen San'an Optoelectronics Co., Ltd. China,
Xiamen 		LEDs
San'an Optoelectronics Wuhu Anrui Optoelectronics Co., Ltd. China,
Wuhu 		LEDs
San'an Optoelectronics Anrui San'an Optoelectronics Co., Ltd. China,
Wuhu 		LEDs
San'an Optoelectronics Luminus Summary United States LEDs
San'an Optoelectronics Quanzhou San'an Semiconductor Technology Co., Ltd. China,
Nan'an 		LEDs
Sanan IC Xiamen Fab China,
Xiamen 		0.00785 2014 150 30,000 SAW filters, Foundry, GaA, GaN, RF, Power
Sanan IC Quanzhou Fab China,
Quanzhou 		4.6 2017 150 8,000 SAW filters, Foundry, GaA, RF
Sanan IC Changsha Fab China,
Changsha 		2.3 2021 150 30,000 Foundry, GaN, SiC, Power
Hua Hong Semiconductor HH Fab7 China, Wuxi 300 90-55 65,000 Foundry
Hua Hong Semiconductor HH Fab1 China,
Shanghai, Jinqiao 		200 95 65,000 Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor HH Fab2 China,
Shanghai, Zhangjiang 		200 180 60,000 Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor HH Fab3 China,
Shanghai, Zhangjiang 		200 90 53,000 Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor (HLMC) HH Fab5 China,
Shanghai, Zhangjiang 		2011 300 65/55-40 35,000 Foundry
Hua Hong Semiconductor (HLMC) HH Fab6 China,
Shanghai, Kangqiao 		2018 300 28/22 40,000 Foundry
HuaLei Optoelectronic China LEDs
Sino King Technology China,
Hefei 		2017 DRAM
APT Electronics China,
Guangzhou 		2006
Aqualite China,
Guangzhou 		2006
Aqualite China,
Wuhan 		2008
Xiamen Jaysun Semiconductor Manufacturing Fab 101 China,
Xiamen 		0.035 2011
Xiyue Electronics Technology Fab 1 China,
Xian 		0.096 2007
Hanking Electronics Fab 1 China,
Fushun 		2018 200 10,000 – 30,000 MEMS Foundry Archived 2021-03-08 at the Wayback Machine,

MEMS Design Archived 2021-03-08 at the Wayback Machine

MEMS Sensors (Inertial, Pressure, Ultrasound,
Piezoelectric, LiDar, Bolometer )

IoT Motion Sensors

CanSemi Phase I China,
Guangzhou 		4 2019 300 180–90 20,000 Power, Analog, Power Discrete
CanSemi Phase II China,
Guangzhou 		2022 300 90-55 20,000
CanSemi Phase III China,
Guangzhou 		2.4 Planned 300 55-40 40,000 Automotive, IoT
SensFab Singapore 1995
MIMOS Semiconductor Malaysia,
Kuala Lumpur 		0.006, 0.135 1997, 2002
Silterra Malaysia Fab1 Malaysia,
Kedah,
Kulim 		1.6 2000 200 250, 200, 180–90 46,000 CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal
Pyongyang Semiconductor Factory 111 Factory North Korea,
Pyongyang 		1980s 3000
DB HiTek Fab 1 South Korea,
Bucheon 		1997 Foundry
DB HiTek Fab 2 South Korea,
Eumsung-Kun 		2001 Foundry
DB HiTek Fab 2 Module 2 South Korea,
Eumsung-Kun 		Foundry
Kodenshi AUK Group Silicon FAB Line
Kodenshi AUK Group Compound FAB Line
Kyocera SAW devices
Seiko Instruments China,
Shanghai
Seiko Instruments Japan,
Akita
Seiko Instruments Japan,
Takatsuka
NIPPON PRECISION CIRCUITS Digital
Epson T wing Japan,
Sakata 		1997 200 350-150 25,000
Epson S wing Japan,
Sakata 		1991 150 1200-350 20,000
Olympus Corporation Nagano Japan,
Nagano Prefecture 		MEMS
Olympus Japan MEMS
Shindengen Electric Manufacturing Philippines,
Laguna,
Calamba
Shindengen Electric Manufacturing Thailand,
Lamphun
NKK JFE Holdings 200 6000 ,
New Japan Radio Kawagoe Works Japan,
Saitama Prefecture,
Fujimino City 		1959 100, 150 4000, 400, 350 Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters

New Japan Radio Saga Electronics Archived 2017-09-19 at the Wayback Machine Japan,
Saga Prefecture 		100, 150 4000, 400, 350 Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters

New Japan Radio NJR FUKUOKA Archived 2017-09-18 at the Wayback Machine Japan,
Fukuoka Prefecture,
Fukuoka City 		2003 100, 150 Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs
New Japan Radio Japan,
Nagano,
Nagano City
New Japan Radio Japan,
Nagano,
Ueda City
Nichia YOKOHAMA TECHNOLOGY CENTER Japan,
KANAGAWA 		LEDs
Nichia SUWA TECHNOLOGY CENTER Japan,
NAGANO 		LEDs
Taiyo Yuden Japan,
Nagano 		SAW devices
Taiyo Yuden Japan,
Ome 		SAW devices
NMB SEMICONDUCTOR DRAM
Silex Microsystems Sweden,
Stockholm County,
Järfälla 		0.009, 0.032 2003, 2009
Elmos Semiconductor Germany,
North Rhine-Westphalia,
Dortmund 		1984 200 800, 350 9000 HV-CMOS
United Monolithic Semiconductors Germany,
Baden-Württemberg,
Ulm 		100 700, 250, 150, 100 Foundry, FEOL, MMIC, GaAs pHEMT, InGaP, GaN HEMT, MESFET, Schottky diode
United Monolithic Semiconductors France,
Île-de-France,
Villebon-sur-Yvette 		100 Foundry, BEOL
Innovative Ion Implant France,
Provence-Alpes-Côte d'Azur,
Peynier 		51–300
Innovative Ion Implant UK,
Scotland,
Bathgate 		51–300
nanoPHAB Netherlands,
North Brabant,
Eindhoven 		50–100 50-10 2–10 MEMS
Micron Semiconductor Ltd. Lancing UK,
England,
West Sussex,
Lancing 		Detectors
Pragmatic Semiconductor FlexLogic 001 UK,
England,
Durham 		0.020 2018 200 600 4,000 Flexible Semiconductor /

Foundry and IDM

Pragmatic Semiconductor FlexLogic 002 UK,
England,
Durham 		0.050 2023 300 600 15,000 Flexible Semiconductor /

Foundry and IDM

Pragmatic Semiconductor FlexLogic 003 UK,
England,
Durham 		0.050 Planned 2025 on line 300 600 15,000 Flexible Semiconductor /

Foundry and IDM

INEX Microtechnology UK,
England,
Northumberland,
Newcastle upon Tyne 		2014 150 Foundry
CSTG UK,
Scotland,
Glasgow 		2003 76, 100 InP, GaAs, AlAs, AlAsSb, GaSb, GaN, InGaN, AlN, diodes, LEDs, lasers, PICs, Optical amplifiers, Foundry
Photonix UK,
Scotland,
Glasgow 		0.011 2000
Integral Belarus,
Minsk 		1963 100, 150, 200 2000, 1500, 350
VSP Mikron WaferFab Russia,
Voronezh Oblast,
Voronezh 		1959 100, 150 900+ 6,000 Analog, power
Semikron Nbg Fab Germany,
Nuremberg 		1984 150 3500 70,000 Bipolar, Power Semiconductors
NM-Tech Russia,
Moscow,
Zelenograd 		2016 200 250-110 20,000
Angstrem Liniya 100 Russia,
Moscow,
Zelenograd 		1963 100 1200 500 (6,000 per year)
Angstrem Liniya 150 Russia,
Moscow,
Zelenograd 		1963 150 600 6,000 (72,000 per year)
Mikron Group Mikron Russia,
Moscow,
Zelenograd 		0.4 2012 200 95-60 3,000
Mikron Group Mikron Russia,
Moscow,
Zelenograd 		2009 200 180
Crocus Nano Electronics Russia,
Moscow 		0.2 2016 300 90-55 4,000 BEOL
NIIIS Russia,
Nizhny Novgorod Oblast,
Nizhny Novgorod 		2010 100–150 350-150 MEMS
NPP Istok Russia,
Moscow Oblast,
Fryazino 		150
Micran Russia,
Tomsk Oblast,
Tomsk 		2015 100
Kremny El Russia,
Bryansk Oblast,
Bryansk 		2019 500
Syntez Microelectronics Russia,
Voronezh Oblast,
Voronezh 		1992 200 350-65 SiC, GaN, TSV
NZPP Vostok Russia,
Novosibirsk Oblast,
Novosibirsk 		1956 100 250-180
Russian Space Systems Russia,
Moscow 		76, 100, 150 1000
Ruselectronics Svetlana-Rost Russia,
Saint Petersburg 		50, 76, 100 1000, 800, 500, 200
OKB-Planeta Svetlana-Rost Russia,
Novgorod Oblast,
Veliky Novgorod 		100 150
FBK – Fondazione Bruno Kessler MNF Italy, Trento 1990 500 150 Research Institute; prototype productions of silicon MEMS, silicon radiation sensors

Number of open fabs currently listed here: 492

(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; see tetraphobia.)

Closed plants

Company Plant Name Plant Location Plant Cost (in US$ Billions) Started Production Wafer Size (mm) Process Technology Node (nm) Production Capacity (Wafers/Month) Technology / Products Ended Production
VEF Soviet Union,
Latvia,
Riga 		1960 Semi-secret government semiconductor fab and a major research center separated from the Russian military manufacturing complex by the collapse of the USSR. 1999
Tower Semiconductor (formerly Micron) Fab 4 Japan,
Hyōgo,
Nishiwaki 		0.450 1992 200 95 60,000 DRAM, foundry 2014
Tower Semiconductor – Tacoma China,
Jiangsu,
Nanjing 		halted, bankruptcy in June 2020 200, 300 (planned) Foundry 2020
Fujian Jinhua (JHICC) F2 China,
Fujian,
Jinjiang 		5.65 2018 (planned) 300 22 60,000 DRAM 2018
Decoma F2 China,
Jiangsu,
Huai'an 		Under construction 300 20,000 2020
Wuhan Hongxin Semiconductor Manufacturing (HSMC) China,
Hubei,
Wuhan 		2019 (halted) 300 14, 7 Foundry 2020
Tsinghua Unigroup – Unigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.) SZ China,
Guangdong,
Shenzhen 		12.5 Planned 300 50,000 DRAM 2019 (just plan)
TSMC Fab 1 Taiwan
Hsinchu,
Baoshan 		1987 150 2000-800 20,000 Foundry, CMOS, BiCMOS 2001, March 9
UMC Fab 1 Japan,
Chiba,
Tateyama 		0.543 1997 200 40,000 Foundry 2012
SK Hynix E-4 United States,
Oregon,
Eugene 		1.3 2007 200 30,000 DRAM 2008
Symetrix – Panasonic Brazil 0.9 (planned) planned FeRAM (just plan)
Rohm (formerly Data General) United States,
California,
Sunnyvale
Kioxia Fab 1 (at Yokkaichi Operations) Japan,
Mie,
Yokkaichi 		1992 200 400 35,000 SRAM, DRAM 2001, September
NEC Livingston United Kingdom,
Scotland,
West Lothian,
Livingston 		4.5 (total) 1981 150, 200 800–350, 250, 180 30,000 CMOS, DRAM, SRAM, MCUs, ASICs, DSPs 2001, April
LFoundry (formerly Renesas Electronics) Germany,
Bavaria,
Landshut 		1992 200 2011
LFoundry (formerly Atmel) France,
Bouches-du-Rhône,
Rousset 		? 200 25.000
Atmel (formerly Siemens) Fab 9 United Kingdom,
Tyne and Wear,
North Tyneside 		1.53 1998 DRAM 2007
EI Niš Ei Poluprovodnici Serbia,
Nišava,
Niš 		1962 100 2000
Plessey Semiconductors (formerly Plus Semi) (formerly MHS Electronics) (formerly Zarlink) (formerly Mitel) (formerly Plessey Semiconductors) UK,
Wiltshire,
Swindon 		100, 150 800, 500 8,000 Bipolar, ASICs, linear ICs
Telefunken Semiconductors Heilbronn, HNO-Line Germany,
Baden-Württemberg,
Heilbronn 		0.125 1993 100, 150 800 10,000 Bipolar, CMOS, BiCMOS, GaAs, SiGe, ASICs, ASSPs, MCUs, discrete, optoelectronics 2015
Qimonda Richmond United States,
Virginia,
Richmond 		3 2005 300 65 38,000 DRAM 2009, January
STMicroelectronics (formerly Nortel) United States,
California,
San Diego,
Rancho Bernardo 		100, 150 800, 500 NMOS, CMOS, BiCMOS 2002
Freescale Semiconductor (formerly Motorola) Toulouse Fab France,
Haute-Garonne,
Toulouse 		1969 150 650 Automotive 2012
Freescale Semiconductor (formerly Motorola) (formerly Tohoku Semiconductor) Sendai Fab Japan,
Miyagi,
Sendai 		1987 150, 200 500 DRAM, microcontrollers, analog, sensors 2009?
Agere Systems (formerly Lucent) (formerly AT&T) Spain,
Madrid,
Tres Cantos 		0.67 1987 500, 350, 300 CMOS 2001
GMT Microelectronics (formerly Commodore Semiconductor) (formerly MOS Technology) United States,
Pennsylvania,
Audubon 		1969
1976
1995 		1000 1976
1992
2001
Integrated Device Technology United States,
California,
Salinas 		1985 150 800-350 2002
ON Semiconductor (formerly Cherry Semiconductor) United States,
Rhode Island,
East Greenwich 		100, 150 1400 10,000 Bipolar, BiCMOS, Linear ICs and ASICs 2004
ON Semiconductor (formerly Motorola) United States,
Arizona,
Phoenix 		150 5000-500 12,000 MOS, power discrete 2011
ON Semiconductor (formerly Motorola) Aizu Plant Japan,
Aizu 		100, 150 1200, 1000 40,000 CMOS, MCUs, logic and smart power ICs 2012
ON Semiconductor (formerly Truesense Imaging, Kodak) Rochester United States,
New York,
Rochester 		150 CCDs and Image Sensors 2020
Intel Fab 8 Israel,
Jerusalem District,
Jerusalem 		1985 150 Microprocessors, Chipsets, Microcontrollers 2007
Intel Fab D2 United States,
California,
Santa Clara 		1989 200 130 8,000 Microprocessors, Chipsets, Flash memory 2009
Intel Fab 17 United States,
Massachusetts,
Hudson 		1998 200 130 Chipsets and other 2014
Fairchild Semiconductor (formerly National Semiconductor) West Jordan United States,
Utah,
West Jordan 		1977 150 2015
Texas Instruments HFAB United States,
Texas,
Houston 		1967 150 2013
Texas Instruments (formerly Silicon Systems) Santa Cruz United States,
California,
Santa Cruz 		0.250 1980 150 800 80,000 HDD 2001
Texas Instruments (formerly National Semiconductor) Arlington United States,
Texas,
Arlington 		1985 150 80000, 35000 2010
Unknown (fortune 500 company) United States,
East Coast 		150 1,600 MEMS 2016
Diodes Incorporated (formerly Lite-On Power Semiconductor) (formerly AT&T) KFAB United States,
Missouri,
Lee's Summit 		1994 130 2017
Qorvo (formerly TriQuint Semiconductor) (formerly Sawtek) United States,
Florida,
Apopka 		SAW filters 2019
GlobalFoundries Abu Dhabi UAE,
Emirate of Abu Dhabi,
Abu Dhabi 		6.8 (planned) 2016 (planned) 300 180-110 45,000 Foundry 2011 (plan stopped)
GlobalFoundries – Chengdu China,
Sichuan,
Chengdu 		10 (planned) 2018 (planned), 2019 (second phase) 300 180/130 (cancelled), 22 (second phase) 20,000 (85,000 planned) Foundry, FDSOI (second phase) 2020 (was idle)
Tondi Elektroonika A-1381 Soviet Union,
Estonia,
Harju,
Tallinn 		1958 Radio equipment, Transisors, Photodiode 1978
Intersil (formerly Harris Semiconductor, formerly GE, formerly RCA) United States,
Ohio,
Findlay 		1954 100, 125 2000, 1500, 1200 60,000 CMOS, bipolar, BiCMOS, Semiconductors, Optoelectronics, Integrated Circuits, Research 2003

Number of closed fabs currently listed here: 45

See also